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TPC8210
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPC8210
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
Low drain-source ON resistance: RDS (ON) = 11 m (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 20 8 32 1.5 W PD(2) 1.1 Unit V V V A
JEDEC JEITA TOSHIBA
2-6J1E
Drain power dissipation (t = 10 s) (Note 2a)
Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b)
Weight: 0.08 g (typ.)
Drain power dissipation (t = 10 s) (Note 2b)
PD (1)
0.75 W
Circuit Configuration
8 7 6 5
PD (2) EAS IAR EAR Tch Tstg
0.45
Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range
83.2 8 0.1 150 -55 to 150
mJ A mJ C C
1
2
3
4
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
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TPC8210
Thermal Characteristics
Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit
Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b)
114 C/W 167
Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b)
Single-device operation (Note 3a)
278
Marking (Note 6)
TPC8210
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1:
Ensure that the channel temperature does not exceed 150C.
Note 2:
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
(a)
(b)
a)
Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 8 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: * on lower left of the marking indicates Pin 1. Weekly code: (Three digits)
Week of manufacture (01 for the first week of a year: sequential number to 52 or 53) Year of manufacture (The last digit of a year)
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TPC8210
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSS Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr RL = 3.7 10 V VGS 0V 4.7 ID = 4 A VOUT 39 ns 32 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 4 A VGS = 10 V, ID = 4 A VDS = 10 V, ID = 4 A Min -- 30 15 1.3 6.5 Typ. 13 11 13 3530 495 580 26 Max 10 10 2.5 20 15 pF Unit A A V V m S
Turn-ON time Switching time Fall time
ton tf toff Qg Qgs Qgd
VDD 15 V - Duty < 1%, tw = 10 s =
Turn-OFF time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge

115 75 6 19
nC
VDD 24 V, VGS = 10 V, ID = 8 A

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF IDR = 8 A, VGS = 0 V Test Condition -- Min -- -- Typ. -- -- Max 32 -1.2 Unit A V
Forward voltage (diode)
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TPC8210
ID - VDS
20 3 4 6 8 10 Common source Ta = 25C Pulse test 2.9 2.8 10 8 10 8 6
ID - VDS
2.8 Common source Ta = 25C Pulse test 2.7
16
(A)
ID
12 2.7 8 2.6 4 2.5 2.4 VGS = 2.3 V 0 0 1 2 3 4 5
ID
(A)
3 6
2.9
Drain current
Drain current
2.6 4 2.5 2 2.4 0 0 2.3 VGS = 2.2 V 0.8 1.0
0.2
0.4
0.6
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
20 Common source VDS = 10 V Pulse test 1
VDS - VGS
Common source Ta = 25C Pulse test
(V) VDS Drain-source voltage
100 25 Ta = -55C
16
0.8
ID
(A)
12
0.6
Drain current
8
0.4
4
0.2
8
4
ID = 2A
0 0
0.5
1
1.5
2
2.5
3
2.5
4
0 0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| - ID
100 100
RDS (ON) - ID
Common source Ta = 25C Pulse test
Forward transfer admittance Yfs
(S)
Drain-source ON resistance RDS (ON) (m)
-55C 10
Tc = 100C
30 VGE = 4.5 V 10 VGS = 10 V 3
25C 1
Common source VDS = 10 V Pulse test 0.1 0.1 1 10 100 1 1 3 10 30 100
Drain current
ID (A)
Drain current
ID (A)
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TPC8210
RDS (ON) - Ta
()
25 100
IDR - VDS
RDS (ON)
20
Drain reverse current IDR (A)
ID = 8, 4, 2 A
5
Drain-source ON resistance
15
VGS = 4.5 V
ID = 8, 4, 2 A
3 10
1 VGS = 0 V
10 10 V 5 Common source Pulse test 0 -80 -40 0 40 80 120 160
1 0
Common source Ta = 25C Pulse test -0.2 -0.4 -0.6 -0.8 -1 -1.2
Ambient temperature
Ta
(C)
Drain-source voltage
VDS (V)
Capacitance - VDS
10000 Ciss 3
Vth - Ta
(V) Vth
2.5
(pF)
1000 Coss Crss 100 Common source VGS = 10 V ID = 1 mA Pulse test 10 0.1 1 10 100
2
Gate threshold voltage
Capacitance
C
1.5
1 Common source 0.5 VDS = 10 V f = 1 mA Pulse test 0 -80 -40 0 40 80 120 140
Drain-source voltage
VDS (V)
Ambient temperature
Ta
(C)
PD - Ta
2
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
Dynamic input/output characteristics
30 Common source Ta = 25C ID = 8 A VDD = 24 V VDS 15 12 12 6 5 VDD = 24 V 5 6 10 15 Pulse test 20 30
(W)
(V)
PD
VDS
1.5
(1)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
Drain power dissipation
t = 10 s (2) 1.0 (3)
20
Drain-source voltage
10
0.5
(4)
0 0
50
100
150
200
0 0
20
40
60
80
0 100
Ambient temperature
Ta
(C)
Total gate charge Qg (nC)
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Gate-source voltage
VGS (V)
25
25
TPC8210
rth - tw
1000 Single pulse (4) (3) (2) (1) 100
Normalized transient thermal impedance rth (C/W)
10
1
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s
0.1 0.001
0.01
0.1
1
10
100
1000
Pulse width
tw
(S)
Safe operating area
100
1 ms* ID max (pluse) * 10
(A)
10 ms*
Drain current
ID
1 0.1
0.01 0.01
* Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 1
VDSS max 10 100
Drain-source voltage
VDS (V)
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TPC8210
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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